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| SMOS21N50, SMOS26N50 Power MOSFETs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102 (TAB) S D G C D E F G H G=Gate, D=Drain, S=Source,TAB=Drain J K L M N Symbol VDSS VDGR VGS VGSM ID25 TJ=25oC to 150oC Test Conditions Maximum Ratings 500 500 20 30 21N50 26N50 21 26 84 104 21 26 30 Unit V TJ=25oC to 150oC; RGS=1M Continuous Transient TC=25oC TC=25oC; pulse width limited by TJM TC=25oC TC=25oC IS TJ IDM; di/dt o V A IDM 21N50 26N50 A IAR 21N50 26N50 A mJ V/ns EAR dv/dt 100A/us; VDD VDSS' 5 150 C; RG=2 300 -55...+150 150 -55...+150 o PD TJ TJM Tstg TL Md Weight TC=25oC W C 1.6mm(0.062 in.) from case for 10s Mounting torque 300 1.13/10 6 o C Nm/Ib.in. g SMOS21N50, SMOS26N50 Power MOSFETs (TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS=0V; ID=250uA VDS=VGS; ID=4mA VGS=20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC Characteristic Values min. typ. max. 500 2 4 100 200 1 Unit V V nA uA mA (TJ=25oC, unless otherwise specified) Symbol RDS(on) Test Conditions 21N50 26N50 Pulse test, t 300us, duty cycle 2% VDS=10V; ID=0.5ID25; pulse test VGS=0V; VDS=25V; f=1MHz VGS=10V; ID=0.5ID25 Characteristic Values min. typ. max. 0.25 0.23 0.20 11 21 4200 450 135 135 160 28 40 62 85 16 25 33 45 65 80 30 40 0.42 0.25 Unit gts Cies Coes Cres Qg(on) Qgs Qgd td(on) tr td(off) tf RthJC RthCK S pF VGS=10V; VDS=0.5VDSS'; ID=0.5ID25 nC ns ns ns ns K/W K/W VGS=10V; VDS=0.5VDSS; ID=0.5ID25 RG=2 (External) Source-Drain Diode Symbol IS ISM VSD trr QRM IRM VGS=0V Test Conditions 21N50 26N50 21N50 26N50 (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. max. 21 26 84 104 1.5 250 400 1 2 10 15 Unit A A V ns ns uC uC A A Repetitive; pulse width limited by TJM IF=IS; VGS=0V; Pulse test, t 300us, duty cycle d 2% TJ=25oC IF=IS; TJ=125oC -di/dt=100A/us; TJ=25oC VR=100V; TJ=125oC TJ=25oC TJ=125oC |
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